10v drive nch mosfet RCJ330N25 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) gate-source voltage v gss garanteed to be 30v . 4) high package power. ? application ? inner circuit switching ? packaging specifications package taping code tl basic ordering unit (pieces) 1000 RCJ330N25 ? ? absolute maximum ratings (ta ? 25c) symbol limits unit drain-source voltage v dss 250 v gate-source voltage v gss ? 30 v continuous i d ? 33 a pulsed i dp ? 132 a continuous i s 26 a pulsed i sp 104 a avalanche current i as 16.5 a avalanche energy e as 74.8 mj power dissipation (tc=25 ? c) p d 40 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l P 500 ? h, v dd =50v, rg=25 ? , starting tch=25c *3 limited only by maximum temperature allowed. ? thermal resistance symbol limits unit channel to case rth(ch-c) 3.12 ? c / w * t c =25c type parameter source current (body diode) drain current parameter *1 *1 *3 *3 *2 *2 lpts 10.1 4.5 13.1 9.0 3.0 0.78 2.54 5.08 1.24 0.4 1.0 1.2 1.3 2.7 (1) (2) (3) (1) gate (2) drain (3) source ? 1 body diode (1) (3) (2) ?1 * 1/6 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RCJ330N25 symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = 30v, v ds =0v drain-source breakdown voltage v (br)dss 250 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =250v, v gs =0v gate threshold voltage v gs (th) 3-5vv ds =10v, i d =1ma forward transfer admittance l y fs l10 20 - si d =16.5a, v ds =10v input capacitance c iss - 4500 - pf v ds =25v output capacitance c oss - 220 - pf v gs =0v reverse transfer capacitance c rss - 130 - pf f=1mhz turn-on delay time t d(on) - 50 - ns i d =16.5a, v dd 125v rise time t r - 200 - ns v gs =10v turn-off delay time t d(off) - 120 - ns r l =7.6? fall time t f - 140 - ns r g =10 ? total gate charge q g - 80 - nc i d =33a, gate-source charge q gs - 25 - nc v dd 125v gate-drain charge q gd - 27 - nc v gs =10v *pulsed z body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =33a, v gs =0v *pulsed conditions parameter conditions m ? parameter static drain-source on-state resistance r ds (on) i d =16.5a, v gs =10v -77 z electrical characteristics (ta = 25 ? c) 105 * * * * * * * * * * 2/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCJ330N25 ? electrical characteristic curves (ta=25 ? c) 0 5 10 15 20 25 30 35 0 1 2 3 4 5 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =5.5v v gs =10.0v v gs =7.0v v gs =8.0v v gs =6.0v v gs =6.5v t a =25 c pulsed 0 5 10 15 20 25 30 35 0 10 20 30 40 50 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =6.0v v gs =10.0v v gs =5.5v v gs =6.5v v gs =7.0v v gs =8.0v t a =25 c pulsed 0.001 0.01 0.1 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.3 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 2 3 4 5 6 -50 0 50 100 150 gate threshold voltage : v gs(th) [v] channel temperature : t ch [ ] fig.4 gate threshold voltage vs. channel temperature v ds =10v i d =1ma pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150 static drain - source on - state resistance : r ds(on) [m ] channel temperature : t ch [ ] fig.6 static drain - source on - state resistance vs. channel temperature v gs =10v pulsed i d =33a i d =16.5a 3/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCJ330N25 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : is [a] source - drain voltage : v sd [v] fig.8 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 2 4 6 8 10 12 14 0 10 20 30 40 50 60 70 80 90 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.11 dynamic input characteristics t a =25 c v dd =125v i d =33a pulsed 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig.12 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.9 static drain - source on - state resistance vs. gate - source voltage i d =33.0a i d =16.5a t a =25 c pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.10 switching characteristics t d(on) t r t d(off) t f v dd P 125v v gs =10v r g =10 t a =25 c pulsed 4/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCJ330N25 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.13 maximum safe operating area operation in this area is limited by r ds (on) (v gs = 10v) ta=25 c single pulse p w = 100 s p w = 1ms p w = 10ms 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.14 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse mounted on epoxy board . (25mm 27mm 0.8mm) rth (ch - a) =74.7 c /w rth (ch - a) (t)=r(t) rth (ch - a) 5/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCJ330N25 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 6/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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